OHMIC ELECTRODE FOR N-TYPE GAALAS

摘要

PURPOSE:To alloy at 400 deg.C and to reduce a thermal influence affected to a semiconductor element at the alloying time by forming n type GaAlAs ohmic electrode of Au, Sn, Cr. CONSTITUTION:An electrode 4 is formed by sequentially laminating a Cr layer 5 of 100Angstrom thick, an Sn layer 6 of 350Angstrom thick and an Au layer 7 of 3,000Angstrom thick and heat treated. A p type side electrode 8 formed on the back surface of a substrate 1 uses an Au-Cr alloy. When thus formed, a natural oxide film inwhich Cr is formed on an n type GaAlAs surface, the film is substantially removed to aid to diffuse Sn in the n type GaAlAs.