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A process for annealing an ion implanted gallium arsenide substrate
A process for annealing an ion implanted gallium arsenide substrate
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机译:离子注入砷化镓镓衬底的退火工艺
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摘要
An ion implanted gallium arsenide substrate is annealed by maintaining it at a temperature above about 400°C in an arsenic-containing gaseous ambient on all sides of the substrate, and heating the gallium arsenide substrate with broad area incoherent light.
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