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High power RF thick film resistor and method for the manufacture thereof

机译:大功率射频厚膜电阻器及其制造方法

摘要

An improved thick film resistor is disclosed which is comprised of a substrate, a resistor body comprised of a plurality of overlying layers of a resistor material, and a pair of spaced apart terminals each of which has a primary contact portion and a plurality of spaced apart secondary contact portions. The secondary contact portions are interleaved between the layers of resistor material and extend partially into the resistor body and are in electrical and heat transferring contact with the respective primary contact portions of each terminal. The novel thick film resistor is compact in its dimensions and is capable of dissipating substantially large amounts of heat and providing lower current densities than conventional thick film resistors.
机译:公开了一种改进的厚膜电阻器,其包括:基板;电阻器主体,该电阻器主体包括电阻器材料的多个上覆层;以及一对间隔开的端子,每个端子具有主接触部分和多个间隔开的端子。次要接触部分。次级接触部分插入在电阻器材料层之间,并且部分地延伸到电阻器主体中,并且与每个端子的相应初级接触部分进行电和热传递接触。新颖的厚膜电阻器尺寸紧凑,并且能够消散大量的热量,并且比传统的厚膜电阻器提供更低的电流密度。

著录项

  • 公开/公告号US4613844A

    专利类型

  • 公开/公告日1986-09-23

    原文格式PDF

  • 申请/专利权人 RCA CORPORATION;

    申请/专利号US19850769145

  • 申请日1985-08-26

  • 分类号H01C1/012;H01C1/01;H01C17/00;

  • 国家 US

  • 入库时间 2022-08-22 07:28:45

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