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MANUFACTURE OF HYDROGENATED AMORPHOUS SILICON CARBON FILM

机译:氢化非晶硅碳膜的制造

摘要

PURPOSE:To obtain a good-quality film by accelerating a generating speed of a hydrogenated amorphous silicon carbon film and sufficiently developing a three-dimentional network structure in said film by utilizing photolysis of carbene which is an unstable intermediate containing divalent carbon atoms. CONSTITUTION:Diazomethane introduced into a gas passage 14 is subjected to photolysis by irradiation with the ultraviolet rays from an ultraviolet ray source 15. Produced CH2 carbene flows into an internal space 22 through a second inlet 13. The CH2 is supplied onto a substrate 16 together with disilane flowing into the internal space 22 through a first inlet 12. Then, it is subjected to photolysis by irradiation of the beams from an excitation ultraviolet ray source 19. This photolysis produces silicon and carbon radicals, which are deposited on a surface of the substrate 16 to rapidly form a film of hydrogenated amorphous silicon carbon.
机译:目的:通过加速氢化非晶硅碳膜的产生速度,并利用卡宾的光解作用在所述膜中充分发展三维网络结构,从而获得高质量的膜,卡宾是一种含二价碳原子的不稳定中间体。组成:引入到气体通道14中的重氮甲烷通过来自紫外线源15的紫外线照射而进行光解。生成的CH2卡宾通过第二入口13流入内部空间22。CH2一起供应到基板16上乙硅烷通过第一入口12流入内部空间22。然后,通过激发紫外线源19的光束辐照使乙硅烷进行光解。这种光解产生了硅和碳自由基,它们沉积在硅的表面上。衬底16迅速形成氢化非晶硅碳膜。

著录项

  • 公开/公告号JPS62254420A

    专利类型

  • 公开/公告日1987-11-06

    原文格式PDF

  • 申请/专利权人 ULVAC CORP;

    申请/专利号JP19860096872

  • 发明设计人 IZUMI HIROHIKO;

    申请日1986-04-28

  • 分类号H01L21/205;H01L21/263;

  • 国家 JP

  • 入库时间 2022-08-22 07:25:11

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