DIETHYLBERYLLIUM DOPANT SOURCE FOR MOCVD GROWN EPITAXIAL SEMICONDUCTOR LAYERS

摘要

ABSTRACTA metal-organic transport compound that permitsthe growth of readily reproducible beryllium dopedepitaxial layers is described. In a MOCVD reactorsystem, a process is performed involving the epitaxialdeposition of a layer of a semiconductor material,including a given elemental species, onto a semiconductorsubstrate maintained within the MOCVD reactor chamber.The elemental species is obtained from the decompositionof a vapor-phase organo-metallic compound consistingessentially of diethylberyllium.