METHOD OF FABRICATING INTEGRATED CIRCUIT STRUCTURES USING REPLICA PATTERNING

摘要

A METHOD OF FABRICATING INTEGRATED CIRCUITSTRUCTURE USING REPLICA PATTERNINGABSTRACT OF THE DISCLOSUREA method of defining narrow regions in anunderlying integrated circuit structure includes the stepsof depositing a first layer of material 12 having selectedetching characteristics on the underlying integrated circuitstructure, depositing a second layer of material 13 havingetching characteristics different from the first layer 12 onthe first layer 12, anisotropically etching the first layer12 and the second layer 13 from all of the underlyingintegrated circuit structure 10 except for a desired regionhaving a periphery which includes the narrow region, forminga coating 15 of smoothing material over all of theunderlying integrated circuit structure 10 except for thefirst layer 12, and isotropically etching the first layer 12to remove it from the surface of the underlying integratedcircuit structure 10 to thereby define the narrow region.Use of the process to fabricate a compact bipolar transistorstructure is also disclosed.