Garnet films for magnetic bubble devices and process for the manufacture of such films

摘要

This garnet film consists of a substrate made up of an amagnetic monocrystalline garnet and has a composition denoted by the formula: R3-u-xSmuBixFe5-y-zMy'Mz"O12 in which R denotes at least one element containing at least Lu and chosen from the group including Y, La, Tm, Yb and Lu; M' is at least one element chosen from the group including Sc, In and Cr; M" is at least one element chosen from the group including V, Nb, Ta, Mo and W; and u, x, y and z have the following values: 0.6 /= u /= 2.4, 0.05 /= x /= 0.5, 0 /= y /= 0.4, 0 z /= 0.2. Application especially to the manufacture of magnetic bubble memory devices. IMAGE