首页>
外国专利>
Double heterojunction semiconductor laser having improved high- frequency characteristics
Double heterojunction semiconductor laser having improved high- frequency characteristics
展开▼
机译:具有改善的高频特性的双异质结半导体激光器
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor laser of the double heterojunction (DH) type having a current-confining buried blocking layer. According to the invention, a high-resistance region having a disturbed crystal structure is present outside and on either side of the strip-shaped active region and extends at least throughout the thickness of the blocking layer. As a result, the lateral leakage currents and the parasitic capacitances are reduced so that the laser can be used at frequencies considerably higher than 1 GHz. The high-resistance region is preferably obtained by protron bombardment. The invention is particularly advantageous in DCPBH lasers for optical communication.
展开▼