Epitaxial layers of bismuth-containing magnetic garnet materials are grown from a melt which comprises flux components lead oxide, bismuth oxide, and one or several additional oxides selected from vanadium oxide, tungsten oxide, molybdenum oxide, and chromium trioxide. The presence of such additional flux component results in increased magnetic anisotropy per degree of supercooling and thus enhances device properties and facilitates epitaxial layer deposition.
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