首页> 外国专利> Microwave device production involves cutting a garnet single crystal substrate into chips and growing a magnetic garnet single crystal film on each chip by liquid-phase epitaxial growth

Microwave device production involves cutting a garnet single crystal substrate into chips and growing a magnetic garnet single crystal film on each chip by liquid-phase epitaxial growth

机译:微波设备的生产涉及将石榴石单晶衬底切割成芯片,并通过液相外延生长在每个芯片上生长石榴石磁性单晶膜。

摘要

Production of a microwave device involves cutting a garnet single crystal substrate into a number of chips; and simultaneously growing a magnetic single crystal on the surface of the chips by liquid-phase epitaxial growth. Preferred Features: The garnet single crystal substrate (e.g., Gd3Ga5O12) has a (111) surface and it is cut so that the (110) surfaces appear as pairs of opposite cutting surfaces and the (211) surfaces appear as another pair of opposite cutting surfaces. After cutting the substrate into more than 500-10000 chips, the chips are placed in a meshed container, and the meshed container is rotated and immersed into a bath containing a molten single-crystal source for growing a magnetic single crystal garnet film (e.g., Y3Fe5O12) on each chip.
机译:微波设备的生产涉及将石榴石单晶衬底切成许多芯片;然后通过液相外延生长同时在芯片表面上生长磁性单晶。优选特征:石榴石单晶衬底(例如,Gd3Ga5O12)具有(111)表面,并进行切割,以使(110)表面呈现为一对相对的切割表面,而(211)表面呈现为另一对相对的切割表面。在将基板切割成500-10000多个切屑之后,将切屑放入网状容器中,旋转网状容器并将其浸入包含熔融单晶源的浴中,以生长磁性单晶石榴石膜(例如, Y3Fe5O12)。

著录项

  • 公开/公告号FR2812006A1

    专利类型

  • 公开/公告日2002-01-25

    原文格式PDF

  • 申请/专利权人 MURATA MANUFACTURING CO LTD;

    申请/专利号FR20010009713

  • 发明设计人 TAKAGI TAKASHI;FUJINO MASARU;

    申请日2001-07-20

  • 分类号C30B19/12;C30B29/28;H01P1/218;

  • 国家 FR

  • 入库时间 2022-08-22 00:24:23

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号