AU-ALLOY EXTRA FINE WIRE FOR SEMICONDUCTOR DEVICE BONDING WIRE

摘要

PURPOSE:To obtain an Au-alloy extra fine wire for semiconductor device bonding wire particularly excellent in strength at high temp. and heat resistance, by providing a composition containing one or more kinds among Ce-group rare earth elements, Se, and Pb each in the prescribed percentage. CONSTITUTION:The above Au-alloy extra fine wire is composed of an Au alloy consisting of, by weight ratio, 0.0001-0.003% of one or more kinds among Ce-group rare earth elements constituted of La, Ce, Pr, and Sm, 0.0005-0.003% Se, 0.002-0.008% Pb, and the balance Au with inevitable impurities. The Au- alloy extra fine wire combines superior strength at ordinary and high temps. with superior heat resistance and, moreover, it is excellent in joining strength. Accordingly, when used as bonding wire for semiconductor device the Au-alloy extra fine wire is capable of preventing the deformation of wire loop at the time of bonding no matter how high-speed the bonding operation is made, and semiconductor device is made highly concentrated and large-sized and, moreover, owing to its superior wire drawability, it can easily be worked into an extra fine wire of =0.05mm diameter.