METHOD FOR THE EXAMINATION OF ELECTRICALLY ACTIVE IMPURITIES OF SEMICONDUCTOR MATERIALS OR STRUCTURES AND MEASURING ARRANGEMENT FOR CARRYING OUT THE METHOD

摘要

A method for examining of electrically active impurities of semiconductor materials and structures, is to establish a junction in a sample taken from the semiconductor to be analyzed, to insert the sample in a microwave field, providing a layer spacer charge in the junction by applying a reverse bias, filling the electrically active defects of the space charge layer, to examine the thermal emission process to establish a thermal equilibrium state appearing said filling step by measuring the change in the microwave field occurring due to changes in the absorption of microwaves occurring in the sample during the thermal emission process. The microwave field must remain present at least during the examination of the transient phenomenon of the absorption of microwaves. In a measuring device for performing said method, a sample (24) comprises a semiconductor junction and is provided with a pair of electrical contacts, the measuring device comprising a biasing means (26) coupled to the contacts to allow the reverse bias the junction in order to establish a load spacer layer, means (26) for filling the electrically active defects in the layer during one or more predetermined periods, and means for detecting transients (27 ) for detecting changes occurring transients in the junction at the end of said periods. Said device further comprises a microwave generator (21), microwave means (23) coupled to the generator and defining a microwave field, the sample being disposed in the middle of the field microwave using a contact connected to ground. The transient detection means comprises a microwave detector for detecting changes in transient phenomena occurring in the absorption of