Mesfet device formed on a semi-insulative substrate

摘要

A MESFET device includes a semi-insulative substrate (21), a source region (22), a drain region (23), a chan­nel region (24), a source electrode (25), a drain elec­trode (26), a gate electrode (27), and a gate-electrode pad (28). The source region (22), drain region (23), and the channel region (24) are formed in a surface region of the substrate (21). The three electrodes (25, 26, 27) and the gate-electrode pad (28) are formed on the sub­strate (21). The MESFET device further comprises a conductive layer (29) formed on the substrate (21) and surrounds the source electrode (25) and the gate-­electrode pad (28). The conductive layer (29) is con­nected to the drain electrode (26).