METHOD FOR FORMING ON A SUBSTRATE A LAYER OF SEMICONDUCTOR MATERIAL BASED ON GROUP II AND VI ELEMENTS

摘要

THE PRESENT INVENTION RELATES TO A METHOD OF FORMING A LAYER 12 COMPRISING A MATERIAL WITH ELEMENTS OF GROUPS II AND VI ON A SUBSTRATE 11, CHARACTERIZED IN THAT IT INCLUDES THE STEPS CONSISTING OF: / P P -A DIRECTING A CURRENT COMPRISING AT LEAST ONE DERIVED FROM A GROUP II ELEMENT TO THE SUBSTRATE; / P P - DIRECTING A CURRENT ORGANIC DERIVATIVE FROM A GROUP VI ELEMENT TO THE SUBSTRATE, SAID ORGANIC DERIVATIVE COMPRISING AT LEAST ONE ORGANIC GROUP HAVING ACTIVATION ENERGY FOR THE FORMATION OF A FREE RADICAL BY DISSOCIATION OF THE GROUP OF THE VII GROUP ELEMENT THAT IS LESS THAN ACTIVATION ENERGY DERIVED FROM THE PRIMARY ALKYL GROUP OF THE GROUP ELEMENT VI .