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In-situ doping of MBE grown II-VI compounds on a homo- or hetero- substrate
In-situ doping of MBE grown II-VI compounds on a homo- or hetero- substrate
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机译:MBE生长的II-VI化合物在均质或异质底物上的原位掺杂
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摘要
The present invention relates to a method of manufacturing semiconductors by as vacuum deposition process on various kinds of group II-VI compound semiconductors by irradiating onto the substrate an ion beam containing nitrogen or phosphorus or arsenic to obtain a p-type thin film crystal.
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