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HIGH VOLTAGE RECTIFIER CIRCUIT OF INVERTER FOR MAGNETRON

机译:磁控管逆变器高压整流电路

摘要

PURPOSE:To reduce the loss of power in a simple structure by connecting the first recovery diode with the reverse voltage withstanding property smaller than that of a PN high voltage diode to the PN high voltage diode in series. CONSTITUTION:The secondary winding 12 of a boosting transformer 7 is connected between A and K of a magnetron 16 through a double voltage rectifier circuit in which a high voltage capacitor 13, a PN high voltage diode 14, and the first recovery diode(F.R.D) 15 are connected in series. In such a composition, a reverse voltage applied to the diodes is alloted mostly to F.R.D 15 while the voltage is low, and alloted to the F.R.D 15 and the PN high voltage diode 14 when the voltage is high. The power loss of the diodes can be reduced consequently.
机译:目的:通过将第一恢复二极管的反向耐压性能小于PN高压二极管与PN高压二极管的反向耐压性能,以一种简单的结构来减少功率损耗。组成:升压变压器7的次级绕组12通过双电压整流器电路连接在磁控管16的A和K之间,在该电路中,高压电容器13,PN高压二极管14和第一恢复二极管(FRD) 15个串联。在这种结构中,施加在二极管上的反向电压在电压低时主要分配给F.R.D 15,而在电压高时分配给F.R.D 15和PN高压二极管14。因此,可以减少二极管的功率损耗。

著录项

  • 公开/公告号JPH01167979A

    专利类型

  • 公开/公告日1989-07-03

    原文格式PDF

  • 申请/专利权人 MATSUSHITA ELECTRIC IND CO LTD;

    申请/专利号JP19870328588

  • 发明设计人 KUSUKI SHIGERU;MAEHARA NAOYOSHI;

    申请日1987-12-24

  • 分类号H05B6/66;H01J23/34;H02M3/28;

  • 国家 JP

  • 入库时间 2022-08-22 06:45:26

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