NITSINITRIDE AND OXIDIZED NITSINITRIDE DIELECTRICS ON SILICON

摘要

NITSINITRIDE AND OXIDIZED NITSINITRIDE DIELECTRICS ON SILICONAbstract of the DisclosureIn an integrated circuit process a composite dielectriclayer is formed on a monocrystalline, polycrystalline or amorphoussilicon substrate by thermally growing a first silicon nitride layerfrom a surface layer of the silicon and then depositing a layer ofamorphous or polycrystalline silicon. A second nitride layer isthermally grown from the deposited silicon to form anitride-silicon-nitride, termed nitsinitride, composite dielectric.At least a top layer of the nitsinitride dielectric can be oxidized toproduce an alternative composite dielectric, termed oxidizednitsinitride. Variation of the thickness of the dielectric layersand/or repeating the layering process sequence results in compositedielectrics of different thicknesses and dielectric properties.12