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FORMATION OF IMPROVED LOW DIELECTRIC CONSTANT CARBON-CONTAINING SILICON OXIDE DIELECTRIC MATERIAL BY REACTION OF CARBON-CONTAINING SILANE WITH OXIDIZING AGENT IN THE PRESENCE OF ONE OR MORE REACTION RETARDANTS
FORMATION OF IMPROVED LOW DIELECTRIC CONSTANT CARBON-CONTAINING SILICON OXIDE DIELECTRIC MATERIAL BY REACTION OF CARBON-CONTAINING SILANE WITH OXIDIZING AGENT IN THE PRESENCE OF ONE OR MORE REACTION RETARDANTS
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机译:通过存在一种或多种反应迟滞剂的含碳硅烷与氧化剂的反应,形成改进的低介电常数含碳氧化硅介电材料
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摘要
An improvement in the formation of low dielectric constant carbon-containing silicon oxide dielectric material by reacting a carbon-substituted silane with an oxidizing agent is described, wherein the process is carried out in the presence of a reaction retardant. The reaction retardant reduces the sensitivity of the reaction to changes in pressure, temperature, and flow rates, and reduces the problem of pressure spiking, resulting in the formation of a deposited film of more uniform thickness across the substrate as well as a film with a smooth surface, and a reduction of the amount of carbon lost during the reaction. The reaction retardant is selected from the group consisting of: 1) an inorganic compound selected from the group consisting of: Cl2, Br2, I2, HF, HCl, HBr, HI, NO, NO2, N2O, H2S, CO, CO2, NH3, and SO; 2) an organic compound selected from the group consisting of: a 1-6 carbon alkane, a 1-6 carbon alkene, a 1-6 carbon alkyne, a 1-ketone, a 1-6 carbon carboxylic acid, a 1-10 carbon aromatic, any of the above organic compounds having one or more atoms therein selected from the group consisting of Cl, Br, I, S, N, and P; and 3) mixtures of 2 or more of the above.
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