Process for the anisotropic etching of III-V materials: use in surface treatment before epitaxial deposition

摘要

This process consists in etching a III-V material (2) by a reactive ion etching employing a gas mixture containing, by volume:… - from 20 to 30% of at least one gaseous hydrocarbon,… - from 30 to 50% of at least one inert gas, and… - from 20 to 50% of hydrogen. …??This etching may be carried out locally with the aid of an etching mask (4a) made of Si3N4. …IMAGE…