Process for the anisotropic etching of a III-V material and application to the surface treatment for epitaxial growth

摘要

Process for the anisotropic etching of a III-V material and application to surface treatment for epitaxial growth.PP This process includes the step of etching a III-V material (2) by reactive ionic etching using a gaseous mixture containing by volume 20 to 30% of at least one gaseous hydrocarbon, 30 to 50% of at least one inert gas and 20 to 50% of hydrogen.PPSaid etching can be performed locally with the aid of a Si.sub.3 N.sub.4 etching mask (4a).