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Wet etching process for making a surface grating having a specified operating constant on the surface of a substrate of a semiconductor material

机译:用于在半导体材料衬底的表面上制造具有指定工作常数的表面光栅的湿法蚀刻工艺

摘要

Wet etch process is used to manufacture a surface grid (1), has the specified grating constant (a) on the surface of semiconductor crystal (3). Object is able to give production surface grid in the regions submicrometre with for distributed feedback laser or other integrated optical structures without a sufficient ripple's depth of a mask. One preliminary surface grinds (4) with specified grating constant (a) but is produced without a mask on the surface (2) of crystal (3) with relatively small ripple using such as laser etching. In order to manufacture actual surface grid (1), preliminary surface grid (1) is retained the additional time do not illuminated and specified for one in the corrosive agent anisotropically acted on behalf of in dark.image
机译:湿法蚀刻工艺用于制造表面栅格(1),在半导体晶体(3)的表面上具有指定的光栅常数(a)。对象能够在亚微米区域内提供生产表面网格,以用于分布式反馈激光器或其他集成的光学结构,而无需足够的掩模波纹深度。一种具有指定光栅常数(a)的初步表面研磨(4),但使用激光刻蚀在晶体(3)的表面(2)上没有掩模的情况下产生相对较小的波纹。为了制造实际的表面栅格(1),保留原始表面栅格(1)的时间不被照亮,并规定在黑暗中各向异性作用的腐蚀剂中的一个。

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