Brief description of the anisotropic etching of a material iii - v: application to the surface treatment with a view of a growth epitaxial

摘要

This process consists in etching a material iii - v 2 by a reactive ionic etching using a mixture of gas containing, by volume: - of 20 to 30 of at least one gaseous hydrocarbon, - of 30 to 50 of at least one inert gas, and - of 20 to 50 of 1996. / p & & p & this etching may be completed locally with the aid of an etching mask 4a, sin.