首页> 外国专利> Method for forming a multilayered metal network for bonding components of a high-density integrated circuit, and integrated circuit produced thereby

Method for forming a multilayered metal network for bonding components of a high-density integrated circuit, and integrated circuit produced thereby

机译:形成用于结合高密度集成电路的部件的多层金属网络的方法以及由此产生的集成电路

摘要

A method of forming a planarization layer over a multilayered metal network which interconnects the components of a high-density integrated circuit and which includes conductors having steep edges disposed over a substrate. A layer of spin-on-glass is applied over the lower metal layer so as to have a thickness substantially equal to that of the lower metal layer and to form a thin film over the conductors. The spin-on-glass layer is uniformly etched to expose the upper surfaces of the conductors, and a dielectric layer is applied onto the etched spin-on- glass layer and upper surfaces of the conductors.
机译:一种在多层金属网络上形成平坦化层的方法,该网络互连高密度集成电路的组件,并且包括在基底上设置具有陡峭边缘的导体。在下部金属层上施加一层旋涂玻璃,以使其厚度基本等于下部金属层的厚度,并在导体上形成薄膜。均匀地蚀刻旋涂玻璃层以暴露导体的上表面,并且将介电层施加到蚀刻的旋涂玻璃层和导体的上表面上。

著录项

  • 公开/公告号US4826786A

    专利类型

  • 公开/公告日1989-05-02

    原文格式PDF

  • 申请/专利权人 BULL S.A.;

    申请/专利号US19860914356

  • 申请日1986-10-02

  • 分类号H01L21/283;H01L21/316;

  • 国家 US

  • 入库时间 2022-08-22 06:28:10

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