Method for forming a multilayered metal network for bonding components of a high-density integrated circuit using a spin on glass layer

摘要

In a high-density integrated circuit having a multilayered metal interconnection network, a planarization layer is formed over a lower metal layer which includes conductors having steep edges by chemically depositing a dielectric layer in the vapor phase over the lower metal layer so as to fill up hollows formed in the dielectric layer in intervals between the conductors, spreading a viscous layer of spin-on- glass over the dielectric layer, annealing the spin-on-glass layer to form a compact mass, forming vias through the spin-on-glass and dielectric layers to the conductors, and applying an upper metal layer over the spin-on-glass layer so as to fill the vias and provide electrical contacts to the conductors of the lower metal layer.