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Forming metallization layers for high-density integrated circuit component interconnection, also deposits dielectric material of low permitivity
Forming metallization layers for high-density integrated circuit component interconnection, also deposits dielectric material of low permitivity
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机译:形成用于高密度集成电路组件互连的金属化层,还会沉积低介电常数的介电材料
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摘要
An opening is made in a sacrificial layer formed over the substrate (101) of a semiconductor component (111). A metal zone is formed in the opening and the sacrificial layer is then removed. A dielectric material (113) of low permittivity (epsilon) is deposited, embedding the metal zone in it. A conductive layer may be formed before the sacrificial layer, the opening being made to bare the conducting layer. The metal zone covers a region of the conductive layer. In addition, an open region of the conductive layer is removed, before deposition of the dielectric.
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