A monolithic electro-acoustic device having an acoustic charge transport device integrated with a transistor

摘要

A novel heterojunction acoustic charge transport device (HACT) (30) includes a modulation doped field effect transistor (MODFET) (32) on the same substrate (10). The device (9) is characterized by a sequence of epitaxial layers such that the MODFET (32) is fabricated in a first portion (36) on the uppermost layers while the HACT device (30) is fabricated in an adjacent second portion (34) using a partially overlapping subset of the lower layers after selected upper ones have been removed to form a single integrated electro-acoustic device.