Rapid thermal annealing of superconducting oxide precursor films on Si and SiO.sub.2 substrates

摘要

This invention is directed to a method of preparing a superconducting metal oxide film on silicon and silicon dioxide substrates. More particularly, the method comprises depositing by physical vapor deposition a superconducting metal oxide precursor directly on the substrate and then subjecting it to rapid thermal annealing in an oxygen atmosphere.