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Temperature protected transistor circuit and method of temperature protecting a transistor

机译:温度保护晶体管电路和温度保护晶体管的方法

摘要

A method of and a circuit for temperature protecting a transistor (4) comprising:PPa controlled voltage supply (34) for applying to the transistor a first voltage substantially less than a predetermined voltage required to render the transistor conductive at normal temperature;PPa detector (8, 12, 18) for detecting whether the transistor conducts in response to the applied first voltage; andPPa controlled voltage supply (46), responsive to not detecting conduction of the transistor, for enabling the transistor by applying thereto a second voltage at least equal to the predetermined voltage, and, responsive to detecting conduction of the transistor, for disabling the transistor by removing the first voltage therefrom and inhibiting the application of the second voltage thereto so as to prevent damage thereto.
机译:一种用于对晶体管(4)进行温度保护的方法和电路,包括:受控电压源(34),该受控电压源(34)向该晶体管施加基本上小于使该晶体管导通的预定电压的第一电压。正常温度;检测器(8、12、18),用于检测晶体管是否响应于所施加的第一电压而导通;以及响应于未检测到晶体管的导通的受控电压源(46),用于通过向其施加至少等于预定电压的第二电压来使晶体管能够工作,并且响应于检测到晶体管的导通。晶体管,用于通过从其上去除第一电压来禁用该晶体管并禁止向其施加第二电压,以防止对其造成损坏。

著录项

  • 公开/公告号US4926283A

    专利类型

  • 公开/公告日1990-05-15

    原文格式PDF

  • 申请/专利权人 MOTOROLA INC.;

    申请/专利号US19890400903

  • 发明设计人 JOHN QUALICH;

    申请日1989-08-30

  • 分类号H02H5/04;

  • 国家 US

  • 入库时间 2022-08-22 06:07:27

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