Power transistor with an integrated temperature sensor element, power transistor circuit, a method for operating a power transistor and method for operating a power transistor circuit

摘要

Power transistor witha semiconductor body (10) comprising:– an underside (12), as well as a top side (11), which in a vertical direction (v) of the underside (12) is spaced apart;– a plurality of transistor cells (30);– a source - zone (13) of a first conductivity type (n);– a body - zone (14) from one to the first conductivity type (n) complementary second conductivity type (p);– a drift - zone (15) of the first conduction type (n);– a drain - zone (16); and– a temperature sensor diode (50), which is a between a n - doped cathode region (15 '', 16'') and a p - doped p-type anode region (14 '') constructed pn - transition (18) comprises;a on the upper side (11) arranged drain - terminal contact (21);a on the underside (12) arranged source - terminal contact (22);a gate - terminal contact (23); anda temperature measuring connection contact (24), which on the upper side (11) and arranged with respect to the drain - terminal contact (21) is dielectrically insulated; wherein either(I) of the first conductivity type is'', n ''and the second conductivity type'' p ''is, the anode zone (14'') electrically to the source - terminal contact (22) is connected, and the cathode zone (15 '', 16'') electrically to the temperature measuring connection contact (24) is connected; or(Ii) of the first conductivity type is'' p ''and the second conductivity type ‘ n ’, ‘ the cathode zone (15, 16 ‘) electrically to the source - terminal contact (22) is connected, and the anode zone (14) ‘ electrically to the temperature measuring connection contact (24) is connected.