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METHOD OF FABRICATING CADMIUM-MERCURY- TELLURIUM

机译:镉汞碲的制备方法

摘要

A layer (20) of CdxHg1-xTe is grown on the surface of a substrate (21) by decomposing alkyls of cadmium and telluride in a mercury atmosphere. The substrate (21) is placed in a vessel (16) containing a mercury bath (19) with the vessel and bath at a suitable pressure and a temperature below the alkyl decomposition temperature. Hydrogen is passed through bubblers (6, 7, 25) separately containing alkyls of cadmium, telluride, and if required a dopant, into the vessel (16). The substrate (21) is independently heated (18) above the temperature of the vessel (16) so that the alkyls decompose on the substrate (21). The substrate may be CdTe, a II-VI compound or mixed II-VI alloy. The alkyls may be dimethyl cadmium, diethyl cadmium, dipropyl cadmium, dimethyl telluride, diethyl telluride, dipropyl telluride, dibutyl telluride, etc., or hydrogen substituted tellurium alkyls such as hydrogen ethyl telluride, etc.
机译:通过在汞气氛中分解镉和碲化物的烷基,在衬底(21)的表面上生长CdxHg1-xTe层(20)。将衬底(21)放置在包含汞浴(19)的容器(16)中,该容器和浴在合适的压力和低于烷基分解温度的温度下进行。氢通过起泡器(6、7、25)进入容器(16),所述起泡器分别包含镉的烷基,碲化物和如果需要的掺杂剂。将衬底(21)独立地加热(18)到容器(16)的温度以上,以使烷基在衬底(21)上分解。基材可以是CdTe,II-VI化合物或混合的II-VI合金。烷基可以是二甲基镉,二乙基镉,二丙基镉,二甲基碲化物,二乙基碲化物,二丙基碲化物,二丁基碲化物等,或氢取代的碲烷基例如碲化氢乙基等。

著录项

  • 公开/公告号JPH0350834B2

    专利类型

  • 公开/公告日1991-08-02

    原文格式PDF

  • 申请/专利权人 SECR DEFENCE BRIT;

    申请/专利号JP19810079953

  • 申请日1981-05-26

  • 分类号C23C14/14;C23C16/18;C23C16/30;C30B25/02;H01L31/0264;H01L31/10;H01L31/18;

  • 国家 JP

  • 入库时间 2022-08-22 06:02:18

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