首页> 外国专利> METHOD AND DEVICE FOR MEASURING MAGNETIC SHIELDING PERFORMANCE OF STRUCTURAL MATERIAL OF MAGNETIC SHIELDING CHAMBER

METHOD AND DEVICE FOR MEASURING MAGNETIC SHIELDING PERFORMANCE OF STRUCTURAL MATERIAL OF MAGNETIC SHIELDING CHAMBER

机译:磁性屏蔽室结构材料的磁性屏蔽性能测量方法及装置

摘要

PURPOSE:To accurately obtain magnetic characteristic of an object to be tested by bringing a chamfer part of ring core which is made by a magnetic material and wound with primary and secondary coils into contact with the object to be tested, allowing AC current to flow in the primary coil, and measuring the inductance of the coil from the side of secondary coil. CONSTITUTION:The chamfer part 4 of ring core 1 is brought into contact closely with the magnetic material 9, then an alternative magnetic field is excited in the ring coil 1 by a sine wave come from an oscillator 5. The primary current at this time is measured by an ammeter 6. The secondary open-circuit voltage generated in the secondary coil 3 is measured by a voltmeter 7. Then from these measured values, an impedance relative permeability muZ of the magnetic material 9 is obtained by the formula. In this formula, V2 is the secondary open-circuit voltage, I1 is the primary current, and C is a constant decided by the characteristic of ring core and that of magnetic material (quality of material and thickness of plate). When a defective part is in existence on this material 9 and the chamfer 4 of ring coil is moved to come on this defective part, lines of magnetic force leak from the defective part and a magnetic resistance of ring core 1 is increased, then the defective part of magnetic material 9 is learned by the local decrease of secondary open-circuit voltage.
机译:目的:通过使由磁性材料制成并缠绕有初级线圈和次级线圈的环形铁心的倒角部分与被测物体接触,以准确获得被测物体的磁特性。初级线圈,并从次级线圈一侧测量线圈的电感。组成:使环形铁芯1的倒角部分4与磁性材料9紧密接触,然后通过来自振荡器5的正弦波在环形线圈1中激发一个交变磁场。此时的初级电流为通过电流表6测量次级线圈3中产生的次级开路电压。通过电压表7测量次级线圈3中产生的次级开路电压。然后从这些测量值通过公式获得磁性材料9的阻抗相对磁导率muZ。在该公式中,V2是次级开路电压,I1是初级电流,C是由环芯和磁性材料的特性(材料的质量和板的厚度)决定的常数。当在该材料9上存在缺陷部分并且使环形线圈的倒角4移动到该缺陷部分上时,磁力线从缺陷部分泄漏,并且环形芯1的磁阻增加,然后该缺陷通过二次开路电压的局部降低来学习磁性材料9的一部分。

著录项

  • 公开/公告号JPH0381677A

    专利类型

  • 公开/公告日1991-04-08

    原文格式PDF

  • 申请/专利权人 SHIMIZU CORP;

    申请/专利号JP19890218223

  • 发明设计人 YUDA TAKASHI;OSADA KOJI;

    申请日1989-08-24

  • 分类号G12B17/02;G01R33/00;

  • 国家 JP

  • 入库时间 2022-08-22 06:00:28

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