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LIGHT RECEIVING MEMBER HAVING A LIGHT RECEIVING LAYER OF A-SI(GE,SN)(H,X) AND A-SI(H,X) LAYERS ON A SUPPORT HAVING SPHERICAL DIMPLES WITH INSIDE FACES HAVING MINUTE IRREGULARITIES
LIGHT RECEIVING MEMBER HAVING A LIGHT RECEIVING LAYER OF A-SI(GE,SN)(H,X) AND A-SI(H,X) LAYERS ON A SUPPORT HAVING SPHERICAL DIMPLES WITH INSIDE FACES HAVING MINUTE IRREGULARITIES
ABSTRACTA light receiving member has a support and a lightreceiving layer. The light receiving layer has an innerlayer composed of a-Si(Ge,Sn)(H,X) and an outer layercomposed of a-Si(H,X) containing neither germanium atomsnor tin atoms. The support has an uneven surface ofspherical dimples, each having an inside face provided withminute irregularities. The light receiving member exhibitshigh photosensitivity in the entire visible region oflight; exhibits an excellent matching property with asemiconductor laser and shows quick light response. Themember is suited for image formation by using coherentlight, free from interference fringe patterns and spotsupon reversed development even after repeated use for along period of time. The member is free from defectiveimages or blurring, shows high density with clear halftones, has a high resolving power, and can provide highquality images.
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