Brief description of embodiments of an alternation of layers of monocrystalline semiconductor material and layers of insulating material

摘要

Method of producing a layer of a monocrystalline semiconductor material on a layer of insulating material 20. For this purpose, it is an epitaxial growth, in a cavity 30 closed by the layers of dielectric material 20, 40, on the basis of a seed 38 of monocrystalline semiconductor material 38 of a substrate. Growth takes place first of all vertically, perpendicularly to the seed 38, and then horizontally in the plane of the cavity 30. / p & & p & this process thus makes it possible to integrate in three dimensions of the semiconductor components.