InP/InGaAs monolithic integrated photodetector and heterojunction bipolar transistor

摘要

A monolithic integrated photoreceiver comprising a p-i-n photodiode and a heterojunction bipolar transistor is realized in a structural configuration that allows the photonics and electronics to be separately optimized in addition to maintaining materials compatibility. These desirable features are accomplished by growing the epilayers of the photodiode and heterojunction bipolar transistor in a single epitaxial growth run. The p-i-n epilayers of the photodiode are grown first on a non-patterned substrate, followed by the direct epitaxial growth of the heterostructure bipolar transistor over the photodiode structure. Selective wet chemical etching over a portion of the entire structure was used in order to delineate the mesa structures of the p-i-n photodiode and transistor such that no contiguous conductive semiconductor layer exists therebetween.