InP/InGaAs Monolithic Integrated Demultiplexer, Photodetector, and Heterojunction Bipolar Transistor
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机译:InP / InGaAs单片集成解复用器,光电检测器和异质结双极晶体管
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摘要
The present invention relates to a monolithic integrated demultiplexing photoreceiver (10) that is formed on a semi-insulating InP substrate(16). A frequency routing device (11) is formed on the substrate and includes a first plurality of InP/InGaAs semiconductor layers. At least one p-i-n photodiode (12) is also formed on the substrate and includes a second plurality of InP/InGaAs semiconductor layers. Additionally, at least one single heterostructure bipolar transistor (18) is formed on the substrate and includes a third plurality of InP/InGaAs semiconductor layers. At least one layer from each of the first, second and third plurality of layers are substantially identical to one another. IMAGE
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