首页>
外国专利>
REFLECTIVE ELECTRON MICROSCOPE AND ELECTRON BEAM INCIDENT ANGLE SETTING METHOD IN REFLECTIVE ELECTRON MICROSCOPE
REFLECTIVE ELECTRON MICROSCOPE AND ELECTRON BEAM INCIDENT ANGLE SETTING METHOD IN REFLECTIVE ELECTRON MICROSCOPE
展开▼
机译:反射电子显微镜中的反射电子显微镜和电子束入射角设置方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE:To lower an image shortening phenomenon and visual field narrowing degree owing to unevenness of a sample by applying electric voltage to the sample to radiate electron beam at practically small incident angle to the sample. CONSTITUTION:Proper electric voltage from an electric power source 12 is applied to a sample 11 to form an electric field E in the front part of the sample 11 shown as dotted lines. As a result, even if the incident electron beam 13 is radiated to the sample at a relatively large incident angle, the electron beam 13 is curved by the electric field E and the incident angle of the electron beam becomes against the sample becomes small. Consequently, even if there are extrusions and recessed parts in the sample 11, the electron beam is radiated at a relatively large incident angle and curved in the periphery of the surface of the sample 11 and the incident angle becomes small. In this way, the range of the shadows of the extrusions and the recessed parts becomes narrow and the visual field is extended practically and since the electron beam is radiated to the sample at large incident angle, the shortening phenomenon of the visual field is lowered.
展开▼