首页> 外国专利> REFLECTIVE ELECTRON MICROSCOPE AND ELECTRON BEAM INCIDENT ANGLE SETTING METHOD IN REFLECTIVE ELECTRON MICROSCOPE

REFLECTIVE ELECTRON MICROSCOPE AND ELECTRON BEAM INCIDENT ANGLE SETTING METHOD IN REFLECTIVE ELECTRON MICROSCOPE

机译:反射电子显微镜中的反射电子显微镜和电子束入射角设置方法

摘要

PURPOSE:To lower an image shortening phenomenon and visual field narrowing degree owing to unevenness of a sample by applying electric voltage to the sample to radiate electron beam at practically small incident angle to the sample. CONSTITUTION:Proper electric voltage from an electric power source 12 is applied to a sample 11 to form an electric field E in the front part of the sample 11 shown as dotted lines. As a result, even if the incident electron beam 13 is radiated to the sample at a relatively large incident angle, the electron beam 13 is curved by the electric field E and the incident angle of the electron beam becomes against the sample becomes small. Consequently, even if there are extrusions and recessed parts in the sample 11, the electron beam is radiated at a relatively large incident angle and curved in the periphery of the surface of the sample 11 and the incident angle becomes small. In this way, the range of the shadows of the extrusions and the recessed parts becomes narrow and the visual field is extended practically and since the electron beam is radiated to the sample at large incident angle, the shortening phenomenon of the visual field is lowered.
机译:目的:通过对样品施加电压,以实际上很小的入射角向样品辐射电子束,降低由于样品不均匀引起的图像缩短现象和视野缩小的程度。组成:将来自电源12的适当电压施加到样品11,以在样品11的前部形成虚线所示的电场E。结果,即使入射电子束13以相对较大的入射角辐射到样品,电子束13也被电场E弯曲,并且电子束的入射角变得相对于样品变小。因此,即使在样品11中存在突起和凹陷部分,电子束也以相对较大的入射角辐射并且在样品11的表面的外围弯曲,并且入射角变小。以此方式,突起和凹陷部分的阴影的范围变窄并且实际上扩大了视野,并且由于电子束以大的入射角辐射到样品,因此降低了视野的缩短现象。

著录项

  • 公开/公告号JPH04101343A

    专利类型

  • 公开/公告日1992-04-02

    原文格式PDF

  • 申请/专利权人 JEOL LTD;

    申请/专利号JP19900217659

  • 发明设计人 KONDO KOJIN;

    申请日1990-08-17

  • 分类号H01J37/29;

  • 国家 JP

  • 入库时间 2022-08-22 05:45:22

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