EQUIVALENTLY MODELING METHOD FOR SCHOTTKY CLAMPED TRANSISTOR

摘要

PURPOSE:To equivalently model a bipolar transistor part of a Schottky clamped transistor by disposing the clamped transistor and the bipolar transistor near on the same chip, and applying an equivalently modeling method of a single bipolar transistor. CONSTITUTION:In a processing step 81, a sample in which a Schottky clamped transistor Tr.A to be equivalently modeled, and a bipolar transistor Tr.B having the same pattern shape as that of the transistor Tr.A and no contact hole for forming a Schottky contact to be opened, different in the structure from the transistor Tr.A, are disposed near on the same chip, is manufactured. Then, in a processing step S2, Schottky barrier diodes of the Tr.A is equivalently modeled by various characteristics between base and collector terminals of the Tr.A, Tr.B, and eventually in a processing step S3, the bipolar transistor of the Tr.A is equivalently modeled by various characteristics of the Tr.A, Tr.B.