AMORPHOUS SELENIUM FILM FOR PHOTOCONDUCTIVE ELEMENT AND PRODUCTION THEREOF

摘要

PURPOSE:To obtain the good amorphous selenium film having good quality by specifying the crystallization transition temp. of the formed film of the amorphous selenium film obtd. by using specific shot-like amorphous selenium as a raw material and using vacuum vapor deposition. CONSTITUTION:The crystallization transition temp. of the formed film of the amorphous selenium film obtd. by using the shot-like amorphous selenium of =99.99% purity as the raw material and using the vacuum vapor deposition method is specified to =142 deg.C. The crystallization transition temp. of the formed selenium film, is measured and the result thereof is used as a measure for identifying the crystal structure of the selenium film formed as the amorphous selenium film for the photoconductive element. The photoconductive element film of the amorphous selenium having the good quality is formed in such a manner.