首页> 外国专利> MANUFACTURE OF RESISTOR FOR JOSEPHSON INTEGRATED CIRCUIT

MANUFACTURE OF RESISTOR FOR JOSEPHSON INTEGRATED CIRCUIT

机译:JOSEPHSON集成电路的电阻器制造

摘要

PURPOSE:To eliminate contact resistance between the wiring layer and a resistor layer as well as to enable the resistor layer to be formed into a predetermined shape with a high precision in a simplified process by continuously growing on the resistor layer a superconducting layer which is not attacked by the same etching gas, forming a superconducting wiring layer in part of the superconducting layer, and using materials of different etch rates for the superconducting wiring layer and the resistor layer. CONSTITUTION:On a semiconducting substrate 11 having an insulating film 12 thereon, a resistor layer 13 and a superconducting layer 14 having an etch rate different from the resistor layer 13 are continuously formed and stacked. Then, on the superconducting layer 14 a resist film 15 of a predetermined pattern is formed, and with this as a mask the superconducting layer 14 and the resistor layer 13 are etched into a predetermined pattern. Next, after removing the resist film 15, a superconducting layer 16 for wiring is deposited and formed on the superconducting layer 14 and the resistor layer 13. Subsequently, on the superconducting layer 16 a resist film 17 of a predetermined pattern is formed, and with this as a mask the superconducting layer 16 and the superconducting layer 14 thereunder are etched, thereby forming the resistor layer 13 connected to the superconducting layer 16.
机译:目的:通过在电阻层上连续生长不导电的超导层,以消除布线层和电阻层之间的接触电阻,并使电阻层以简化的过程高精度地形成为预定形状。在相同的蚀刻气体的作用下,在超导层的一部分中形成超导布线层,并对超导布线层和电阻层使用蚀刻速率不同的材料。构成:在上面有绝缘膜12的半导体衬底11上,连续形成并堆叠电阻层13和蚀刻速率与电阻层13不同的超导层14。然后,在超导层14上形成预定图案的抗蚀剂膜15,并以此作为掩模,将超导层14和电阻器层13蚀刻成预定图案。接下来,在去除抗蚀剂膜15之后,在超导层14和电阻器层13上沉积并形成用于布线的超导层16。随后,在超导层16上形成具有预定图案的抗蚀剂膜17,并且以此为掩模,对超导层16和其下的超导层14进行蚀刻,从而形成连接到超导层16的电阻器层13。

著录项

  • 公开/公告号JPH0379875B2

    专利类型

  • 公开/公告日1991-12-20

    原文格式PDF

  • 申请/专利权人 KOGYO GIJUTSUIN;

    申请/专利号JP19860229533

  • 发明设计人 MOROHASHI SHINICHI;

    申请日1986-09-30

  • 分类号H01L39/24;

  • 国家 JP

  • 入库时间 2022-08-22 05:37:58

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号