Semiconductor electron beam source for video equipment - uses HF Schottky diode built up in silicon@ substrate

摘要

The surface of the electron source consists of a central 'island' (5) of N-type crystalline semiconductor material surrounded by concentric rings of other material produced using conventional integrated circuit techniques. The island (5) is surrounded by a sunken ring of polycrystalline silicon (11), which acts as a connection zone. The connection zone is insulated from the substrate by a layer (9a) of silicon oxide material which (9) outside the connection zone. The insulation (9) outside the zone is thicker and has an addition nitride layer (10) on top of it. Connections are made via a circular conductive layer (12) and a radial layer (24) which are overlaid on the insulated areas.