METHOID FOR THE FABRICATION OF A HIGH RESISTANCE LOAD RESISTORUTILIZING SIDE WALL POLYSILICON SPACERS

摘要

The high resistance load is produced by (a) forming a first oxide layer (2) on the silicon substrate (1), (b) depositing a first polysilicon layer (3) on the layer (2), and forming a first polysilicon pad (3A) by the mask pattern process, (c) forming a second oxide layer (4) on the pad (3A) and the layer (2), and forming an island-type second oxide pattern (4A), (d) wholly depositing a second polysilicon layer (5), (e) forming second polysilicon spacers (5',5") along the side wall of the pattern (4A), and (f) removing a fixed portion of the spacers (5',5") by the etching process, and connecting the pad (3A) to the spacers (5',5").