A MESFET with a self-aligned gate is produced by (a) selectively implanting and then healing a semiconductor substrate (1) surface to form a sloping layer (11); (b) applying a first metal layer (21) of ohnic contact metal over the entire surface of the sloping layer; (c) applying a first dielectric layer (31) and then a first lacquer mask layer; (d) anisotropically etching the region exposed by the mask layer to form a ditch extending through the first dielectric layer (31) and the first metal layer (21) into the sloping layer (11) to form an outer recess (11a), the etched depth of the ditch in the sloping layer (11) being sufficient to ensure the predetermined minimum breakthrough voltage for the gale to be produced, depending on the sloping profile of the sloping layer (11); (e) isotropically depositing a second dielectric layer (32) on the structured surface; (f) anisotropically etching this second dielectric layer (32) to leave first and second spacers; and (g) applying a second metal layer as gate metal.
展开▼
