method of producing a pmos - knowledge, and according to this procedure are pmos transistor

摘要

A process is disclosed for producing a PMOS-transistor (1) in a p-doped substrate (2). A n-doped trough (4) is produced by implantation, then by diffusion, the transistor (1) is insulated with a field oxide layer (14) and the transistor gate is produced by photolithographically patterning a layer. The photosensitive resist that remains from the gate etching by photolithographic patterning is used to mask the drain area at the extremity on the gate side, for at least one p?--implantation. A falling edge to the surface of the drain area is generated in the layer of photoresist (22) at the gate edge (11). The falling edge deviates the flank (17, 19) of the implantation concentration profile (16, 18) towards the channel located under the gate area (12) when the implantation is introduced.