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Method for producing a metal-gate MOS transistor, in particular a PMOS transistor, and corresponding integrated circuit
Method for producing a metal-gate MOS transistor, in particular a PMOS transistor, and corresponding integrated circuit
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机译:用于制造金属栅MOS晶体管,尤其是PMOS晶体管的方法以及相应的集成电路
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摘要
At least one MOS transistor is produced by forming a dielectric region above a substrate and forming a gate over the dielectric region. The gate is formed to include a metal gate region. Formation of the metal gate region includes: forming a layer of a first material configured to reduce an absolute value of a threshold voltage of the transistor, and configuring a part of the metal gate region so as also to form a diffusion barrier above the layer of the first material. Then, doped source and drain regions are formed using a dopant activation anneal.
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