MOSFET with improved properties - has 1st conductivity substrate, convex channel region, gate on channel region and 2nd conductivity source and drain regions

摘要

The MOSFET comprises: (1) a substrate (11) of a first conductivity type; (2) a convex channel region formed on the substrate (11); (3) a gate formed on the channel region and substantially covering it; (4) source and drain regions (13,13a) of a second conductivity type with a low concn., which are each formed in opposite parts of the sides of the channel region; and (5) source and drain regions (16,16a) of the second conductivity type, with a high concn., which are formed in the parts of the substrate (11) which are each disposed outside the opposite parts of the sides of the gate (15) and in the vicinity of the surface of the substrate.