Resist giving high sensitivity and resolution - contains acid precursor and etherified poly:hydroxy:styrene with esterified ether gp. decomposed by acid

摘要

Resist for making patterns contains an acid precursor (I), which releases an acid on exposure to chemical radiation, and a cpd. (II) with a substit. decomposed by acid, which is a (poly)p-hydroxystyrene, partly or completely converted to a substd.-oxycarbonylmethyl ether, of the formula: R1 = a monovalent organic gp.; m - 0, 1 or a positive integer; n = a positive integer. USE/ADVANTAGE - The compsn. is claimed for making resist patterns by selective exposure and development. It is esp. suitable for making LSI circuits and semiconductor devices. It is highly sensitive to UV and ionising radiation and gives high resolution.