Photosensitive poly:silane compsn. contg. photo-acid precursor - to increase sensitivity and resolution and give rectangular structure cross=section

摘要

Photosensitive compsn. contains a polysilane (I) with recurring units of the formula (I). R1-R2 independently = H or a (substd.) 1-18C alkyl, 6-18C aryl or 7-22C aralkyl gp.; and a cpd. (II) releasing an acid on exposure to light. More specifically, R1 and/or R2 = an ar(alk)yl gp. with OH, (substd.) alkoxy or (substd.) siloxy substit(s). in an aromatic ring. Pref. (I) has some units with R1 and/or R2 = gps. with a OH-substd. aromatic ring and other units with R1 and/or R2 = gps. with a (substd.)-alkoxy- or (substd.)-siloxyl-substd. aromatic ring. (I) has mol. wt. = ca. 1000-500000. USE/ADVANTAGE - (I) is an organic polymer with a Si-Si chain as backbone and has semiconductor properties. It is useful for making structures on e.g. Si microchips. (II) imparts high resolution and ensures that the structures have almost rectangular cross-section. It has very high sensitivity to UV light of wavelength ca. 250 nm or shorter, esp. an ArF excimer laser.