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Schottky barrier diodes and Schottky barrier diode-clamped transistors and method of fabrication
Schottky barrier diodes and Schottky barrier diode-clamped transistors and method of fabrication
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机译:肖特基势垒二极管和钳位肖特基势垒二极管的晶体管及其制造方法
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摘要
A Schottky diode is formed with a layer of intrinsic polysilicon separating a metal silicide layer from an n conductivity type active region. This structure avoids the necessity for a process step which opens a window in the intrinsic polysilicon layer and reduces the portion of surface area needed for formation of a Schottky diode, compared to previous devices. The Schottky diode can be formed as part of an overall process for forming an integrated circuit and can be positioned in parallel across the collector/base junction of a bipolar transistor to form a Schottky barrier diode-clamped transistor.
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