Method for fabricating a silicon pressure sensor incorporating silicon-on- insulator structures

摘要

A method for fabricating an all silicon absolute pressure sensor employing silicon-on-insulator structures. More particularly, a method for fabricating an all silicon absolute pressure sensor based upon an ungated metal-oxide semiconductor field-effect transistor which offers a high degree of immunity to temperature effects, increased reliability, minimal substrate parasitics, reduced manufacturing variations from device to device, as well as inexpensive and simple fabrication.