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Method of fabricating metal contact of ultra-large-scale integration metal-oxide semiconductor field effect transistor with silicon-on- insulator structure
Method of fabricating metal contact of ultra-large-scale integration metal-oxide semiconductor field effect transistor with silicon-on- insulator structure
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机译:具有绝缘体上硅结构的超大规模集成金属氧化物半导体场效应晶体管的金属接触的制造方法
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摘要
In a method for fabricating a ULSI MOSFET with SOI structure, an additional polysilicon layer is used to form polysilicon/metal compound metal contacts on source and drain regions and a gate so as to avoid leakage current and short channel effect problems.
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